MemTest86 V11.3 Pro Build: 1000
PassMark Software
www.passmark.com

Memory summary:
 Number of RAM slots: 2
 Number of RAM modules: 2
 Number of RAM SPDs detected: 2
 Total Physical Memory: 130636M

RAM Configuration:
 Transfer Speed: 5586MT/s
 Channel Mode: x2 Channel
 Timings: 46-45-45-90
 Voltage: 1.100V
 ECC Enabled: No

SPD Details:
--------------

SPD #: 0
==============
RAM Type: DDR5
  Maximum Clock Speed (MHz): 2800 (JEDEC)
  Maximum Transfer Speed (MT/s): DDR5-5600
  Maximum Bandwidth (MB/s): PC5-44800
Memory Capacity (MB): 65536
Jedec Manufacture Name: Micron Technology
SPD Revision: 1.0
Registered: No
ECC: No
SPD #: 0
Manufactured: Week 9 of Year 2025
Module Part #: CT64G56C46S5.M16B1
Module Revision: 0x0031
Module Serial #: EB2E6148
Module Manufacturing Location: 0x00
# of Row Addressing Bits: 17
# of Column Addressing Bits: 10
# of Banks: 32
# of Ranks: 2
Device Width in Bits: 8
Bus Width in Bits: 32
Module Voltage: 1.1V
CAS Latencies Supported: 22 26 28 30 32 36 40 42 46 50 
Timings @ Max Frequency (JEDEC): Timings @ Max Frequency (JEDEC)
  Maximum Clock Speed (MHz): 2800
  Maximum Transfer Speed (MT/s): DDR5-5600
  Maximum Bandwidth (MB/s): PC5-44800
  Minimum Clock Cycle Time, tCK (ns): 0.357
  Minimum CAS Latency Time, tAA (ns): 16.000
  Minimum RAS to CAS Delay, tRCD (ns): 16.000
  Minimum Row Precharge Time, tRP (ns): 16.000
  Minimum Active to Precharge Time, tRAS (ns): 32.000
  Minimum Row Active to Row Active Delay, tRRD (ns): 0.000
  Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns): 48.000
  Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns): 410.000
DDR5 Specific SPD Attributes
  Maximum Clock Cycle time, tCKmax (ns): 1.010
  Minimum Write Recovery time, tWR (ns): 30.000
  Minimum Recovery Delay time, tRFC2 (ns): 220.000
  Minimum Recovery Delay time, tRFC4 (ns): 190.000
  Minimum Recovery Delay time (diff. logical rank) tRFC1_dlr (ns): 0.000
  Minimum Recovery Delay time (diff. logical rank) tRFC2_dlr (ns): 0.000
  Minimum Recovery Delay time (diff. logical rank) tRFCsb_dlr (ns): 0.000
  Module information SPD revision: 0x10
  SPD present: Yes
  SPD device type: SPD5118
  SPD Manufacturer: Montage Technology Group (Bank: 7, ID: 0x32)
  PMIC 0 present: Yes
  PMIC 0 device type: PMIC5100
  PMIC 0 Manufacturer: Monolithic Power Systems Inc (Bank: 12, ID: 0x2A)
  PMIC 1 present: No
  PMIC 2 present: No
  Thermal Sensor 0 present: No
  Thermal Sensor 1 present: No
  Module Type: SODIMM
  Module Height (mm): 29 - 30
  Module Thickness (mm): front 1-2 , back 1-2 
  Module reference card: Raw Card B Rev. 0
  # DRAM Rows: 2
  Heat spreader installed: No
  Operating Temperature Range: XT (0 to + 95 C)
  Rank Mix: Symmetrical
  Number of Package Ranks per Sub-Channel: 2
  Number of Sub-Channels per DIMM: 2
  Bus width extension per Sub-Channel: 0 bits
  Primary bus width per Sub-Channel: 32 bits
  DRAM Stepping: 66
  DRAM Manufacture: Micron Technology
  SDRAM Package Type: Monolithic SDRAM
  SDRAM Density Per Die: 24Gb
  SDRAM Column Address Bits: 10
  SDRAM Row Address Bits: 17
  SDRAM Device Width: 8
  SDRAM Bank Groups: 8
  SDRAM Banks Per Bank Group: 4
  First SDRAM RFM RAAMMT: 6X (FGR: 12X)
  First SDRAM RFM RAAIMT: 80 (FGR: 40)
  First SDRAM RFM Required: no
  First SDRAM RFM RAA Counter Decrement per REF command: RAAIMT / 2
  Second SDRAM RFM RAAMMT: 0X (FGR: 0X)
  Second SDRAM RFM RAAIMT: 0 (FGR: 0)
  Second SDRAM RFM Required: no
  Second SDRAM RFM RAA Counter Decrement per REF command: RAAIMT / 2
  First SDRAM ARFM Level A RAAMMT: 6X (FGR: 12X)
  First SDRAM ARFM Level A RAAIMT: 80 (FGR: 40)
  First SDRAM ARFM Level A supported: no
  First SDRAM ARFM Level A RAA Counter Decrement per REF command: RAAIMT / 2
  Second SDRAM ARFM Level A RAAMMT: 0X (FGR: 0X)
  Second SDRAM ARFM Level A RAAIMT: 0 (FGR: 0)
  Second SDRAM ARFM Level A supported: no
  Second SDRAM ARFM Level A RAA Counter Decrement per REF command: RAAIMT / 2
  First SDRAM ARFM Level B RAAMMT: 6X (FGR: 12X)
  First SDRAM ARFM Level B RAAIMT: 80 (FGR: 40)
  First SDRAM ARFM Level B supported: no
  First SDRAM ARFM Level B RAA Counter Decrement per REF command: RAAIMT / 2
  Second SDRAM ARFM Level B RAAMMT: 0X (FGR: 0X)
  Second SDRAM ARFM Level B RAAIMT: 0 (FGR: 0)
  Second SDRAM ARFM Level B supported: no
  Second SDRAM ARFM Level B RAA Counter Decrement per REF command: RAAIMT / 2
  First SDRAM ARFM Level C RAAMMT: 6X (FGR: 12X)
  First SDRAM ARFM Level C RAAIMT: 80 (FGR: 40)
  First SDRAM ARFM Level C supported: no
  First SDRAM ARFM Level C RAA Counter Decrement per REF command: RAAIMT / 2
  Second SDRAM ARFM Level C RAAMMT: 0X (FGR: 0X)
  Second SDRAM ARFM Level C RAAIMT: 0 (FGR: 0)
  Second SDRAM ARFM Level C supported: no
  Second SDRAM ARFM Level C RAA Counter Decrement per REF command: RAAIMT / 2
  sPPR Granularity: One repair element per bank
  sPPR Undo/Lock: supported
  Burst length 32: not supported
  MBIST/mPPR: supported
  mPPR/hPPR Abort: not supported
  PASR: supported
  DCA Types Supported: Device supports DCA for 4-phase internal clock(s)
  x4 RMW/ECS Writeback Suppression: supported
  x4 RMW/ECS Writeback Suppression MR selector: MR15
  Bounded Fault: supported
  SDRAM Nominal Voltage, VDDQ: 1.1V
  SDRAM Nominal Voltage, VPP: 1.8V

SPD #: 1
==============
RAM Type: DDR5
  Maximum Clock Speed (MHz): 2800 (JEDEC)
  Maximum Transfer Speed (MT/s): DDR5-5600
  Maximum Bandwidth (MB/s): PC5-44800
Memory Capacity (MB): 65536
Jedec Manufacture Name: Micron Technology
SPD Revision: 1.0
Registered: No
ECC: No
SPD #: 1
Manufactured: Week 9 of Year 2025
Module Part #: CT64G56C46S5.M16B1
Module Revision: 0x0031
Module Serial #: EB2E60B6
Module Manufacturing Location: 0x00
# of Row Addressing Bits: 17
# of Column Addressing Bits: 10
# of Banks: 32
# of Ranks: 2
Device Width in Bits: 8
Bus Width in Bits: 32
Module Voltage: 1.1V
CAS Latencies Supported: 22 26 28 30 32 36 40 42 46 50 
Timings @ Max Frequency (JEDEC): Timings @ Max Frequency (JEDEC)
  Maximum Clock Speed (MHz): 2800
  Maximum Transfer Speed (MT/s): DDR5-5600
  Maximum Bandwidth (MB/s): PC5-44800
  Minimum Clock Cycle Time, tCK (ns): 0.357
  Minimum CAS Latency Time, tAA (ns): 16.000
  Minimum RAS to CAS Delay, tRCD (ns): 16.000
  Minimum Row Precharge Time, tRP (ns): 16.000
  Minimum Active to Precharge Time, tRAS (ns): 32.000
  Minimum Row Active to Row Active Delay, tRRD (ns): 0.000
  Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns): 48.000
  Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns): 410.000
DDR5 Specific SPD Attributes
  Maximum Clock Cycle time, tCKmax (ns): 1.010
  Minimum Write Recovery time, tWR (ns): 30.000
  Minimum Recovery Delay time, tRFC2 (ns): 220.000
  Minimum Recovery Delay time, tRFC4 (ns): 190.000
  Minimum Recovery Delay time (diff. logical rank) tRFC1_dlr (ns): 0.000
  Minimum Recovery Delay time (diff. logical rank) tRFC2_dlr (ns): 0.000
  Minimum Recovery Delay time (diff. logical rank) tRFCsb_dlr (ns): 0.000
  Module information SPD revision: 0x10
  SPD present: Yes
  SPD device type: SPD5118
  SPD Manufacturer: Montage Technology Group (Bank: 7, ID: 0x32)
  PMIC 0 present: Yes
  PMIC 0 device type: PMIC5100
  PMIC 0 Manufacturer: Monolithic Power Systems Inc (Bank: 12, ID: 0x2A)
  PMIC 1 present: No
  PMIC 2 present: No
  Thermal Sensor 0 present: No
  Thermal Sensor 1 present: No
  Module Type: SODIMM
  Module Height (mm): 29 - 30
  Module Thickness (mm): front 1-2 , back 1-2 
  Module reference card: Raw Card B Rev. 0
  # DRAM Rows: 2
  Heat spreader installed: No
  Operating Temperature Range: XT (0 to + 95 C)
  Rank Mix: Symmetrical
  Number of Package Ranks per Sub-Channel: 2
  Number of Sub-Channels per DIMM: 2
  Bus width extension per Sub-Channel: 0 bits
  Primary bus width per Sub-Channel: 32 bits
  DRAM Stepping: 66
  DRAM Manufacture: Micron Technology
  SDRAM Package Type: Monolithic SDRAM
  SDRAM Density Per Die: 24Gb
  SDRAM Column Address Bits: 10
  SDRAM Row Address Bits: 17
  SDRAM Device Width: 8
  SDRAM Bank Groups: 8
  SDRAM Banks Per Bank Group: 4
  First SDRAM RFM RAAMMT: 6X (FGR: 12X)
  First SDRAM RFM RAAIMT: 80 (FGR: 40)
  First SDRAM RFM Required: no
  First SDRAM RFM RAA Counter Decrement per REF command: RAAIMT / 2
  Second SDRAM RFM RAAMMT: 0X (FGR: 0X)
  Second SDRAM RFM RAAIMT: 0 (FGR: 0)
  Second SDRAM RFM Required: no
  Second SDRAM RFM RAA Counter Decrement per REF command: RAAIMT / 2
  First SDRAM ARFM Level A RAAMMT: 6X (FGR: 12X)
  First SDRAM ARFM Level A RAAIMT: 80 (FGR: 40)
  First SDRAM ARFM Level A supported: no
  First SDRAM ARFM Level A RAA Counter Decrement per REF command: RAAIMT / 2
  Second SDRAM ARFM Level A RAAMMT: 0X (FGR: 0X)
  Second SDRAM ARFM Level A RAAIMT: 0 (FGR: 0)
  Second SDRAM ARFM Level A supported: no
  Second SDRAM ARFM Level A RAA Counter Decrement per REF command: RAAIMT / 2
  First SDRAM ARFM Level B RAAMMT: 6X (FGR: 12X)
  First SDRAM ARFM Level B RAAIMT: 80 (FGR: 40)
  First SDRAM ARFM Level B supported: no
  First SDRAM ARFM Level B RAA Counter Decrement per REF command: RAAIMT / 2
  Second SDRAM ARFM Level B RAAMMT: 0X (FGR: 0X)
  Second SDRAM ARFM Level B RAAIMT: 0 (FGR: 0)
  Second SDRAM ARFM Level B supported: no
  Second SDRAM ARFM Level B RAA Counter Decrement per REF command: RAAIMT / 2
  First SDRAM ARFM Level C RAAMMT: 6X (FGR: 12X)
  First SDRAM ARFM Level C RAAIMT: 80 (FGR: 40)
  First SDRAM ARFM Level C supported: no
  First SDRAM ARFM Level C RAA Counter Decrement per REF command: RAAIMT / 2
  Second SDRAM ARFM Level C RAAMMT: 0X (FGR: 0X)
  Second SDRAM ARFM Level C RAAIMT: 0 (FGR: 0)
  Second SDRAM ARFM Level C supported: no
  Second SDRAM ARFM Level C RAA Counter Decrement per REF command: RAAIMT / 2
  sPPR Granularity: One repair element per bank
  sPPR Undo/Lock: supported
  Burst length 32: not supported
  MBIST/mPPR: supported
  mPPR/hPPR Abort: not supported
  PASR: supported
  DCA Types Supported: Device supports DCA for 4-phase internal clock(s)
  x4 RMW/ECS Writeback Suppression: supported
  x4 RMW/ECS Writeback Suppression MR selector: MR15
  Bounded Fault: supported
  SDRAM Nominal Voltage, VDDQ: 1.1V
  SDRAM Nominal Voltage, VPP: 1.8V

SMBIOS Details:
--------------

Memory Device #: 0
==============
Total Width: 64 bits
Data Width: 64 bits
Size: 65536 MB
Form Factor: SODIMM
Device Set: 0
Device Locator: Controller0-ChannelA-DIMM0
Bank Locator: BANK 0
Memory Type: DDR5
Type Detail: Synchronous
Speed: 5600MT/s
Manufacturer: Micron Technology
Serial Number: EB2E6148
Asset Tag: 9876543210
Part Number: CT64G56C46S5.M16B1
Attributes: 00000002
Configured Memory Speed: 5600MT/s
Minimum Voltage: 1100 mV
Maximum Voltage: 1100 mV
Configured Voltage: 1100 mV
Memory Technology: DRAM
Memory Operating Mode Capability: Unknown
Firmware Version: 
Module Manufacturer ID: 2C80
Module Product ID: N/A
Memory Subsystem Controller Manufacturer ID: N/A
Memory Subsystem Controller Product ID: N/A
Non Volatile Size: N/A
Volatile Size: 68719476736 MB
Cache Size: N/A
Logical Size: N/A

Memory Device #: 1
==============
Total Width: 64 bits
Data Width: 64 bits
Size: 65536 MB
Form Factor: SODIMM
Device Set: 0
Device Locator: Controller1-ChannelA-DIMM0
Bank Locator: BANK 0
Memory Type: DDR5
Type Detail: Synchronous
Speed: 5600MT/s
Manufacturer: Micron Technology
Serial Number: EB2E60B6
Asset Tag: 9876543210
Part Number: CT64G56C46S5.M16B1
Attributes: 00000002
Configured Memory Speed: 5600MT/s
Minimum Voltage: 1100 mV
Maximum Voltage: 1100 mV
Configured Voltage: 1100 mV
Memory Technology: DRAM
Memory Operating Mode Capability: Unknown
Firmware Version: 
Module Manufacturer ID: 2C80
Module Product ID: N/A
Memory Subsystem Controller Manufacturer ID: N/A
Memory Subsystem Controller Product ID: N/A
Non Volatile Size: N/A
Volatile Size: 68719476736 MB
Cache Size: N/A
Logical Size: N/A